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Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP.

Hakkarainen T, Schramm A, Tukiainen A, Ahorinta R, Toikkanen L, Guina M - Nanoscale Res Lett (2010)

Bottom Line: We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks.The QD-ordering properties of compressive GaInP are found to be very similar with respect to the use of compressive GaInAs, while a significantly stronger ordering of QDs was observed on tensile GaInP.Furthermore, we observed a change of the major type of dislocation in GaInP layers as the growth temperature was modified.

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Affiliation: Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland.

ABSTRACT
We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force microscopy, scanning electron microscopy, and X-ray reciprocal space mapping. The QD-ordering properties of compressive GaInP are found to be very similar with respect to the use of compressive GaInAs, while a significantly stronger ordering of QDs was observed on tensile GaInP. Furthermore, we observed a change of the major type of dislocation in GaInP layers as the growth temperature was modified.

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Tangential stress component above a misfit dislocation calculated for a CS-GaInP and b for TS-GaInP layers. The AFM cross-sections in (a) and (b) are measured along the lines in Fig. 3c and 3d, respectively
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Figure 4: Tangential stress component above a misfit dislocation calculated for a CS-GaInP and b for TS-GaInP layers. The AFM cross-sections in (a) and (b) are measured along the lines in Fig. 3c and 3d, respectively

Mentions: in which G is the shear modulus, v is the Poisson’s ratio, and x is the lateral distance from the MD. Figure 4 shows strain profiles calculated with Eq. (2) for a MD in TS and CS layers using values for G and v indicated in Table 2 and a layer thickness h of 90 nm. The in-plane and out-of-plane components of the Burgers vector were assumed to be b// = −b/2, for the CS layers and b// = b/2, for the TS layer.


Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP.

Hakkarainen T, Schramm A, Tukiainen A, Ahorinta R, Toikkanen L, Guina M - Nanoscale Res Lett (2010)

Tangential stress component above a misfit dislocation calculated for a CS-GaInP and b for TS-GaInP layers. The AFM cross-sections in (a) and (b) are measured along the lines in Fig. 3c and 3d, respectively
© Copyright Policy
Related In: Results  -  Collection

Show All Figures
getmorefigures.php?uid=PMC2991205&req=5

Figure 4: Tangential stress component above a misfit dislocation calculated for a CS-GaInP and b for TS-GaInP layers. The AFM cross-sections in (a) and (b) are measured along the lines in Fig. 3c and 3d, respectively
Mentions: in which G is the shear modulus, v is the Poisson’s ratio, and x is the lateral distance from the MD. Figure 4 shows strain profiles calculated with Eq. (2) for a MD in TS and CS layers using values for G and v indicated in Table 2 and a layer thickness h of 90 nm. The in-plane and out-of-plane components of the Burgers vector were assumed to be b// = −b/2, for the CS layers and b// = b/2, for the TS layer.

Bottom Line: We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks.The QD-ordering properties of compressive GaInP are found to be very similar with respect to the use of compressive GaInAs, while a significantly stronger ordering of QDs was observed on tensile GaInP.Furthermore, we observed a change of the major type of dislocation in GaInP layers as the growth temperature was modified.

View Article: PubMed Central - HTML - PubMed

Affiliation: Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland.

ABSTRACT
We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force microscopy, scanning electron microscopy, and X-ray reciprocal space mapping. The QD-ordering properties of compressive GaInP are found to be very similar with respect to the use of compressive GaInAs, while a significantly stronger ordering of QDs was observed on tensile GaInP. Furthermore, we observed a change of the major type of dislocation in GaInP layers as the growth temperature was modified.

No MeSH data available.


Related in: MedlinePlus