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Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP.

Hakkarainen T, Schramm A, Tukiainen A, Ahorinta R, Toikkanen L, Guina M - Nanoscale Res Lett (2010)

Bottom Line: We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks.The QD-ordering properties of compressive GaInP are found to be very similar with respect to the use of compressive GaInAs, while a significantly stronger ordering of QDs was observed on tensile GaInP.Furthermore, we observed a change of the major type of dislocation in GaInP layers as the growth temperature was modified.

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Affiliation: Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland.

ABSTRACT
We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force microscopy, scanning electron microscopy, and X-ray reciprocal space mapping. The QD-ordering properties of compressive GaInP are found to be very similar with respect to the use of compressive GaInAs, while a significantly stronger ordering of QDs was observed on tensile GaInP. Furthermore, we observed a change of the major type of dislocation in GaInP layers as the growth temperature was modified.

No MeSH data available.


Related in: MedlinePlus

XRD reciprocal space map measured from a 60-nm Ga0.66In0.34P/GaAs layer (Sample D) around (004) reflection in [011] direction
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Figure 1: XRD reciprocal space map measured from a 60-nm Ga0.66In0.34P/GaAs layer (Sample D) around (004) reflection in [011] direction

Mentions: The strain relaxation values on Table 1 show that the strained layers in all of the QD samples are at the early stage of strain relaxation. This is also observed in the RSM of sample D shown in Fig. 1. Both GaAs and GaInP peaks as well as satellite peaks are well observable, indicating good crystal quality and low strain relaxation. The RSMs of the other samples (not presented here) showed similar features.


Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP.

Hakkarainen T, Schramm A, Tukiainen A, Ahorinta R, Toikkanen L, Guina M - Nanoscale Res Lett (2010)

XRD reciprocal space map measured from a 60-nm Ga0.66In0.34P/GaAs layer (Sample D) around (004) reflection in [011] direction
© Copyright Policy
Related In: Results  -  Collection

Show All Figures
getmorefigures.php?uid=PMC2991205&req=5

Figure 1: XRD reciprocal space map measured from a 60-nm Ga0.66In0.34P/GaAs layer (Sample D) around (004) reflection in [011] direction
Mentions: The strain relaxation values on Table 1 show that the strained layers in all of the QD samples are at the early stage of strain relaxation. This is also observed in the RSM of sample D shown in Fig. 1. Both GaAs and GaInP peaks as well as satellite peaks are well observable, indicating good crystal quality and low strain relaxation. The RSMs of the other samples (not presented here) showed similar features.

Bottom Line: We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks.The QD-ordering properties of compressive GaInP are found to be very similar with respect to the use of compressive GaInAs, while a significantly stronger ordering of QDs was observed on tensile GaInP.Furthermore, we observed a change of the major type of dislocation in GaInP layers as the growth temperature was modified.

View Article: PubMed Central - HTML - PubMed

Affiliation: Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland.

ABSTRACT
We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force microscopy, scanning electron microscopy, and X-ray reciprocal space mapping. The QD-ordering properties of compressive GaInP are found to be very similar with respect to the use of compressive GaInAs, while a significantly stronger ordering of QDs was observed on tensile GaInP. Furthermore, we observed a change of the major type of dislocation in GaInP layers as the growth temperature was modified.

No MeSH data available.


Related in: MedlinePlus