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Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission.

Alonso-González P, González L, Martín-Sánchez J, González Y, Fuster D, Sales DL, Hernández-Maldonado D, Herrera M, Molina SI - Nanoscale Res Lett (2010)

Bottom Line: In this work, we present results on the formation of vertical molecule structures formed by two vertically aligned InAs quantum dots (QD) in which a deliberate control of energy emission is achieved.In this way, either symmetric or asymmetric vertically coupled structures can be obtained.As a characteristic when using a droplet epitaxy patterning process, the density of quantum dot molecules finally obtained is low enough (2 × 10(8) cm(-2)) to permit their integration as active elements in advanced photonic devices where spectroscopic studies at the single nanostructure level are required.

View Article: PubMed Central - HTML - PubMed

ABSTRACT
In this work, we present results on the formation of vertical molecule structures formed by two vertically aligned InAs quantum dots (QD) in which a deliberate control of energy emission is achieved. The emission energy of the first layer of QD forming the molecule can be tuned by the deposition of controlled amounts of InAs at a nanohole template formed by GaAs droplet epitaxy. The QD of the second layer are formed directly on top of the buried ones by a strain-driven process. In this way, either symmetric or asymmetric vertically coupled structures can be obtained. As a characteristic when using a droplet epitaxy patterning process, the density of quantum dot molecules finally obtained is low enough (2 × 10(8) cm(-2)) to permit their integration as active elements in advanced photonic devices where spectroscopic studies at the single nanostructure level are required.

No MeSH data available.


Schematic diagram of the samples grown for obtaining vertical QD molecule structures. The first layer of nanostructures (QD1), is formed after depositing 1.2, 1.4, and 1.5 ML of InAs into GaAs nanoholes previously formed by droplet epitaxy. After the growth of 4-nm-thick GaAs barrier layer, a second layer of nanostructures (QD2) is formed on top of QD1 by a stress induced growth process when 0.9 ML of InAs is deposited
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Figure 1: Schematic diagram of the samples grown for obtaining vertical QD molecule structures. The first layer of nanostructures (QD1), is formed after depositing 1.2, 1.4, and 1.5 ML of InAs into GaAs nanoholes previously formed by droplet epitaxy. After the growth of 4-nm-thick GaAs barrier layer, a second layer of nanostructures (QD2) is formed on top of QD1 by a stress induced growth process when 0.9 ML of InAs is deposited

Mentions: With the aim of studying the optical emission of the resulting QD molecule structures, a 155-nm-thick GaAs layer is finally grown. A schematic diagram of these samples is shown in Fig. 1.


Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission.

Alonso-González P, González L, Martín-Sánchez J, González Y, Fuster D, Sales DL, Hernández-Maldonado D, Herrera M, Molina SI - Nanoscale Res Lett (2010)

Schematic diagram of the samples grown for obtaining vertical QD molecule structures. The first layer of nanostructures (QD1), is formed after depositing 1.2, 1.4, and 1.5 ML of InAs into GaAs nanoholes previously formed by droplet epitaxy. After the growth of 4-nm-thick GaAs barrier layer, a second layer of nanostructures (QD2) is formed on top of QD1 by a stress induced growth process when 0.9 ML of InAs is deposited
© Copyright Policy
Related In: Results  -  Collection

Show All Figures
getmorefigures.php?uid=PMC2991188&req=5

Figure 1: Schematic diagram of the samples grown for obtaining vertical QD molecule structures. The first layer of nanostructures (QD1), is formed after depositing 1.2, 1.4, and 1.5 ML of InAs into GaAs nanoholes previously formed by droplet epitaxy. After the growth of 4-nm-thick GaAs barrier layer, a second layer of nanostructures (QD2) is formed on top of QD1 by a stress induced growth process when 0.9 ML of InAs is deposited
Mentions: With the aim of studying the optical emission of the resulting QD molecule structures, a 155-nm-thick GaAs layer is finally grown. A schematic diagram of these samples is shown in Fig. 1.

Bottom Line: In this work, we present results on the formation of vertical molecule structures formed by two vertically aligned InAs quantum dots (QD) in which a deliberate control of energy emission is achieved.In this way, either symmetric or asymmetric vertically coupled structures can be obtained.As a characteristic when using a droplet epitaxy patterning process, the density of quantum dot molecules finally obtained is low enough (2 × 10(8) cm(-2)) to permit their integration as active elements in advanced photonic devices where spectroscopic studies at the single nanostructure level are required.

View Article: PubMed Central - HTML - PubMed

ABSTRACT
In this work, we present results on the formation of vertical molecule structures formed by two vertically aligned InAs quantum dots (QD) in which a deliberate control of energy emission is achieved. The emission energy of the first layer of QD forming the molecule can be tuned by the deposition of controlled amounts of InAs at a nanohole template formed by GaAs droplet epitaxy. The QD of the second layer are formed directly on top of the buried ones by a strain-driven process. In this way, either symmetric or asymmetric vertically coupled structures can be obtained. As a characteristic when using a droplet epitaxy patterning process, the density of quantum dot molecules finally obtained is low enough (2 × 10(8) cm(-2)) to permit their integration as active elements in advanced photonic devices where spectroscopic studies at the single nanostructure level are required.

No MeSH data available.