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Filtering of Defects in Semipolar (11-22) GaN Using 2-Steps Lateral Epitaxial Overgrowth.

Kriouche N, Leroux M, Vennéguès P, Nemoz M, Nataf G, de Mierry P - Nanoscale Res Lett (2010)

Bottom Line: Good-quality (11-22) semipolar GaN sample was obtained using epitaxial lateral overgrowth.The growth conditions were chosen to enhance the growth rate along the [0001] inclined direction.Thus, the coalescence boundaries stop the propagation of basal stacking faults.

View Article: PubMed Central - HTML - PubMed

Affiliation: Centre de Recherche sur l'Hétéroépitaxie et ses Applications CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France.

ABSTRACT
Good-quality (11-22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along the [0001] inclined direction. Thus, the coalescence boundaries stop the propagation of basal stacking faults. The faults filtering and the improvement of the crystalline quality were attested by transmission electron microscopy and low temperature photoluminescence. The temperature dependence of the luminescence polarization under normal incidence was also studied.

No MeSH data available.


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Cross-sectional SEM images of a the GaN crystals at an intermediate growth stage, b after full coalescence. c Schematic representation of the crystal growth during asymmetric ELO. The lines inclined at 32° from the surface represent the BSFs. The a and +c numbers refer to the crystallographic directions [11−20] and [0001], respectively
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Figure 1: Cross-sectional SEM images of a the GaN crystals at an intermediate growth stage, b after full coalescence. c Schematic representation of the crystal growth during asymmetric ELO. The lines inclined at 32° from the surface represent the BSFs. The a and +c numbers refer to the crystallographic directions [11−20] and [0001], respectively

Mentions: The different steps of the asymmetric ELO are described in Fig. 1. Growth from the underlying GaN template above the openings leads, under appropriate MOVPE conditions, to the formation of crystals with an asymmetric shape.


Filtering of Defects in Semipolar (11-22) GaN Using 2-Steps Lateral Epitaxial Overgrowth.

Kriouche N, Leroux M, Vennéguès P, Nemoz M, Nataf G, de Mierry P - Nanoscale Res Lett (2010)

Cross-sectional SEM images of a the GaN crystals at an intermediate growth stage, b after full coalescence. c Schematic representation of the crystal growth during asymmetric ELO. The lines inclined at 32° from the surface represent the BSFs. The a and +c numbers refer to the crystallographic directions [11−20] and [0001], respectively
© Copyright Policy
Related In: Results  -  Collection

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getmorefigures.php?uid=PMC2991163&req=5

Figure 1: Cross-sectional SEM images of a the GaN crystals at an intermediate growth stage, b after full coalescence. c Schematic representation of the crystal growth during asymmetric ELO. The lines inclined at 32° from the surface represent the BSFs. The a and +c numbers refer to the crystallographic directions [11−20] and [0001], respectively
Mentions: The different steps of the asymmetric ELO are described in Fig. 1. Growth from the underlying GaN template above the openings leads, under appropriate MOVPE conditions, to the formation of crystals with an asymmetric shape.

Bottom Line: Good-quality (11-22) semipolar GaN sample was obtained using epitaxial lateral overgrowth.The growth conditions were chosen to enhance the growth rate along the [0001] inclined direction.Thus, the coalescence boundaries stop the propagation of basal stacking faults.

View Article: PubMed Central - HTML - PubMed

Affiliation: Centre de Recherche sur l'Hétéroépitaxie et ses Applications CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France.

ABSTRACT
Good-quality (11-22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along the [0001] inclined direction. Thus, the coalescence boundaries stop the propagation of basal stacking faults. The faults filtering and the improvement of the crystalline quality were attested by transmission electron microscopy and low temperature photoluminescence. The temperature dependence of the luminescence polarization under normal incidence was also studied.

No MeSH data available.


Related in: MedlinePlus