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High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors.

Choi CY, Lee JH, Koh JH, Ha JG, Koo SM, Kim S - Nanoscale Res Lett (2010)

Bottom Line: We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications.The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility.These two methods were compared by two-dimensional numerical simulations.

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ABSTRACT
We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25-150°C, involving the application of a suitable (1) positive or (2) negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range, the latter shows an improvement in the off-state control of up to five orders of magnitude (-5.2 × 10(-6)).

No MeSH data available.


a Measured (solid line) IDS—VDS curves for fabricated Si nanoribbon FETs. (The dashed lines show the corresponding results obtained from the 2D numerical simulations). b–e show the channel cross-sections of the device, indicating the conduction current density contours for the ‘on’ state b at room temperature and cT = 150°C with VSUB = 0, and for the ‘off’ state d at room temperature and eT = 150°C with VSUB = 0
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Figure 3: a Measured (solid line) IDS—VDS curves for fabricated Si nanoribbon FETs. (The dashed lines show the corresponding results obtained from the 2D numerical simulations). b–e show the channel cross-sections of the device, indicating the conduction current density contours for the ‘on’ state b at room temperature and cT = 150°C with VSUB = 0, and for the ‘off’ state d at room temperature and eT = 150°C with VSUB = 0

Mentions: To overcome such a thermal problem, which may result in the variation of the operation point, it is desirable to keep the current level constant over a range of temperatures. In order to realize such operation of the nanoribbon FETs, we propose the following two methods of compensating for the variation in the current level with temperature from room temperature up to 150°C; (1) A suitable positive bias VSUB is applied to realize this constant level operation, by enhancing the current level at elevated temperatures to the room temperature (T ~ 25°C) current level, as can be seen in method ‘(1)’ of Fig. 3a. (2) A negative VSUB is applied to reduce the current level at different temperatures down to its level at T ~ 150°C, as can be seen in method ‘(2)’ of Fig. 3a.


High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors.

Choi CY, Lee JH, Koh JH, Ha JG, Koo SM, Kim S - Nanoscale Res Lett (2010)

a Measured (solid line) IDS—VDS curves for fabricated Si nanoribbon FETs. (The dashed lines show the corresponding results obtained from the 2D numerical simulations). b–e show the channel cross-sections of the device, indicating the conduction current density contours for the ‘on’ state b at room temperature and cT = 150°C with VSUB = 0, and for the ‘off’ state d at room temperature and eT = 150°C with VSUB = 0
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Related In: Results  -  Collection

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Figure 3: a Measured (solid line) IDS—VDS curves for fabricated Si nanoribbon FETs. (The dashed lines show the corresponding results obtained from the 2D numerical simulations). b–e show the channel cross-sections of the device, indicating the conduction current density contours for the ‘on’ state b at room temperature and cT = 150°C with VSUB = 0, and for the ‘off’ state d at room temperature and eT = 150°C with VSUB = 0
Mentions: To overcome such a thermal problem, which may result in the variation of the operation point, it is desirable to keep the current level constant over a range of temperatures. In order to realize such operation of the nanoribbon FETs, we propose the following two methods of compensating for the variation in the current level with temperature from room temperature up to 150°C; (1) A suitable positive bias VSUB is applied to realize this constant level operation, by enhancing the current level at elevated temperatures to the room temperature (T ~ 25°C) current level, as can be seen in method ‘(1)’ of Fig. 3a. (2) A negative VSUB is applied to reduce the current level at different temperatures down to its level at T ~ 150°C, as can be seen in method ‘(2)’ of Fig. 3a.

Bottom Line: We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications.The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility.These two methods were compared by two-dimensional numerical simulations.

View Article: PubMed Central - HTML - PubMed

ABSTRACT
We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25-150°C, involving the application of a suitable (1) positive or (2) negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range, the latter shows an improvement in the off-state control of up to five orders of magnitude (-5.2 × 10(-6)).

No MeSH data available.