Limits...
Controlled Synthesis of Monolayer Graphene Toward Transparent Flexible Conductive Film Application.

Lee BJ, Yu HY, Jeong GH - Nanoscale Res Lett (2010)

Bottom Line: To optimize the synthesis condition, we investigated the effects of synthetic temperature and cooling rate in the ranges of 850-1,000°C and 2-8°C/min, respectively.It was found that a cooling rate of 4°C/min after 1,000°C synthesis is the most effective condition for monolayer graphene production.We also successfully transferred as-synthesized graphene films to arbitrary substrates such as silicon-dioxide-coated wafers, glass, and polyethylene terephthalate sheets to develop transparent, flexible, and conductive film application.

View Article: PubMed Central - HTML - PubMed

ABSTRACT
We demonstrate the synthesis of monolayer graphene using thermal chemical vapor deposition and successive transfer onto arbitrary substrates toward transparent flexible conductive film application. We used electron-beam-deposited Ni thin film as a synthetic catalyst and introduced a gas mixture consisting of methane and hydrogen. To optimize the synthesis condition, we investigated the effects of synthetic temperature and cooling rate in the ranges of 850-1,000°C and 2-8°C/min, respectively. It was found that a cooling rate of 4°C/min after 1,000°C synthesis is the most effective condition for monolayer graphene production. We also successfully transferred as-synthesized graphene films to arbitrary substrates such as silicon-dioxide-coated wafers, glass, and polyethylene terephthalate sheets to develop transparent, flexible, and conductive film application.

No MeSH data available.


Schematic illustration of a graphene synthesis system
© Copyright Policy
Related In: Results  -  Collection


getmorefigures.php?uid=PMC2964468&req=5

Figure 1: Schematic illustration of a graphene synthesis system

Mentions: As a graphene synthesis substrate, Ni thin films (300 nm thickness) were deposited by electron-beam evaporation using a SiO2-covered Si wafer. The substrate was cut to 2 cm × 2 cm in size and installed in a 1-inch quartz tube furnace, as shown in Fig. 1. The tube was evacuated using a mechanical pump and then filled with Ar gas until atmospheric pressure was reached. While heating to the synthesis temperature range of 850–1,000°C, a mixture of H2 (500 sccm) and Ar (500 sccm) gas was used under ambient pressure. The heating rate was 20°C/min. After the synthesis temperature was reached, we held it 30-min further to stabilize the furnace and to obtain a single-crystalline Ni phase, as suggested in a previous report [12]. The gas was then promptly changed into a mixture consisting of CH4 (5 sccm) and H2 (1,500 sccm) that was flowed during the 10-min synthesis. The effect of cooling rate on the graphene microstructure was investigated by modulating the cooling rate to 2, 4, 6, and 8°C/min through intentional cooling using a fan.


Controlled Synthesis of Monolayer Graphene Toward Transparent Flexible Conductive Film Application.

Lee BJ, Yu HY, Jeong GH - Nanoscale Res Lett (2010)

Schematic illustration of a graphene synthesis system
© Copyright Policy
Related In: Results  -  Collection

Show All Figures
getmorefigures.php?uid=PMC2964468&req=5

Figure 1: Schematic illustration of a graphene synthesis system
Mentions: As a graphene synthesis substrate, Ni thin films (300 nm thickness) were deposited by electron-beam evaporation using a SiO2-covered Si wafer. The substrate was cut to 2 cm × 2 cm in size and installed in a 1-inch quartz tube furnace, as shown in Fig. 1. The tube was evacuated using a mechanical pump and then filled with Ar gas until atmospheric pressure was reached. While heating to the synthesis temperature range of 850–1,000°C, a mixture of H2 (500 sccm) and Ar (500 sccm) gas was used under ambient pressure. The heating rate was 20°C/min. After the synthesis temperature was reached, we held it 30-min further to stabilize the furnace and to obtain a single-crystalline Ni phase, as suggested in a previous report [12]. The gas was then promptly changed into a mixture consisting of CH4 (5 sccm) and H2 (1,500 sccm) that was flowed during the 10-min synthesis. The effect of cooling rate on the graphene microstructure was investigated by modulating the cooling rate to 2, 4, 6, and 8°C/min through intentional cooling using a fan.

Bottom Line: To optimize the synthesis condition, we investigated the effects of synthetic temperature and cooling rate in the ranges of 850-1,000°C and 2-8°C/min, respectively.It was found that a cooling rate of 4°C/min after 1,000°C synthesis is the most effective condition for monolayer graphene production.We also successfully transferred as-synthesized graphene films to arbitrary substrates such as silicon-dioxide-coated wafers, glass, and polyethylene terephthalate sheets to develop transparent, flexible, and conductive film application.

View Article: PubMed Central - HTML - PubMed

ABSTRACT
We demonstrate the synthesis of monolayer graphene using thermal chemical vapor deposition and successive transfer onto arbitrary substrates toward transparent flexible conductive film application. We used electron-beam-deposited Ni thin film as a synthetic catalyst and introduced a gas mixture consisting of methane and hydrogen. To optimize the synthesis condition, we investigated the effects of synthetic temperature and cooling rate in the ranges of 850-1,000°C and 2-8°C/min, respectively. It was found that a cooling rate of 4°C/min after 1,000°C synthesis is the most effective condition for monolayer graphene production. We also successfully transferred as-synthesized graphene films to arbitrary substrates such as silicon-dioxide-coated wafers, glass, and polyethylene terephthalate sheets to develop transparent, flexible, and conductive film application.

No MeSH data available.