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Synthesis of ZnGa(2)O(4) Hierarchical Nanostructure by Au Catalysts Induced Thermal Evaporation.

Chen XM, Fei GT, Yan J, Zhu YQ, De Zhang L - Nanoscale Res Lett (2010)

Bottom Line: In this paper, ZnGa(2)O(4) hierarchical nanostructures with comb-like morphology are fabricated by a simple two-step chemical vapor deposition (CVD) method: first, the Ga(2)O(3) nanowires were synthesized and employed as templates for the growth of ZnGa(2)O(4) nanocombs; then, the as-prepared Ga(2)O(3) nanowires were reacted with ZnO vapor to form ZnGa(2)O(4) nanocombs.The as-prepared ZnGa(2)O(4) nanocombs were highly crystallized with cubic spinel structure.From the photoluminescence (PL) spectrum, a broad band emission in the visible light region was observed of as-prepared ZnGa(2)O(4) nanocombs, which make it promising application as an optical material.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, 230031 Hefei, People's Republic of China.

ABSTRACT
In this paper, ZnGa(2)O(4) hierarchical nanostructures with comb-like morphology are fabricated by a simple two-step chemical vapor deposition (CVD) method: first, the Ga(2)O(3) nanowires were synthesized and employed as templates for the growth of ZnGa(2)O(4) nanocombs; then, the as-prepared Ga(2)O(3) nanowires were reacted with ZnO vapor to form ZnGa(2)O(4) nanocombs. Before the reaction, the Au nanoparticles were deposited on the surfaces of Ga(2)O(3) nanowires and used as catalysts to control the teeth growth of ZnGa(2)O(4) nanocombs. The as-prepared ZnGa(2)O(4) nanocombs were highly crystallized with cubic spinel structure. From the photoluminescence (PL) spectrum, a broad band emission in the visible light region was observed of as-prepared ZnGa(2)O(4) nanocombs, which make it promising application as an optical material.

No MeSH data available.


a Typical TEM image of a single-ZnGa2O4 nanocomb. b–e are the EDS spectra acquired from marked regions 1 to 4 in a. The HRTEM images and the corresponding SAED of marked regions 2 to 4 in a are shown in f–h and inset to them, respectively
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Figure 3: a Typical TEM image of a single-ZnGa2O4 nanocomb. b–e are the EDS spectra acquired from marked regions 1 to 4 in a. The HRTEM images and the corresponding SAED of marked regions 2 to 4 in a are shown in f–h and inset to them, respectively

Mentions: Figure 3a shows a typical TEM image of a single-ZnGa2O4 nanocomb, indicating that the diameter of the tooth gradually increasing from the tip to the bottom. Figure 3b–3e are the EDS spectra acquired from the marked regions 1 to 4 in Fig. 3a. The copper and carbon signals in EDS spectra are caused by the copper grids used in TEM observation. The EDS spectrum of region 1 confirms that the particle on the tip of the tooth is Au catalyst. Apparently, the growth of the teeth is induced by the Au catalyst. From the EDS spectra of region 2 to 4, it can be found that the atomic ratio of Zn:Ga in all these regions are close to 1:2. These results further confirm that the nanocomb is composed of ZnGa2O4. The high-resolution TEM (HRTEM) images and the corresponding selected-area electron diffraction (SAED) of region 2 to 4 in Fig. 3a are shown in Fig. 3f–3h and the inset to them, respectively, which reveal that the comb-like ZnGa2O4 nanostructures are highly crystallized. In Fig. 3f, it can be seen that the marked interplanar spacing is 0.48 nm which corresponds to the (111) lattice plane of ZnGa2O4, indicating the dominant growth direction of the tooth along the [111] direction. And no extended defects were found in the whole tooth. Fig. 3g is the HRTEM image and the corresponding SAED of junction region between the stem and the tooth depicts that the interface is very smooth without planar defects like other semiconductor comb-like nanostructures [31,32]. It is of advantage to be used in the future application. Figure 3h is the HRTEM image and the corresponding SAED of stem. The marked interplanar spacings are 0.48 and 0.29 nm corresponding to the (111) plane and plane, respectively. It can be inferred that the initial Ga2O3 nanowires were totally transformed into highly pure and single-crystalline ZnGa2O4 nanowires after reacting with Zn and/or ZnOx vapors at high temperature.


Synthesis of ZnGa(2)O(4) Hierarchical Nanostructure by Au Catalysts Induced Thermal Evaporation.

Chen XM, Fei GT, Yan J, Zhu YQ, De Zhang L - Nanoscale Res Lett (2010)

a Typical TEM image of a single-ZnGa2O4 nanocomb. b–e are the EDS spectra acquired from marked regions 1 to 4 in a. The HRTEM images and the corresponding SAED of marked regions 2 to 4 in a are shown in f–h and inset to them, respectively
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Related In: Results  -  Collection

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Figure 3: a Typical TEM image of a single-ZnGa2O4 nanocomb. b–e are the EDS spectra acquired from marked regions 1 to 4 in a. The HRTEM images and the corresponding SAED of marked regions 2 to 4 in a are shown in f–h and inset to them, respectively
Mentions: Figure 3a shows a typical TEM image of a single-ZnGa2O4 nanocomb, indicating that the diameter of the tooth gradually increasing from the tip to the bottom. Figure 3b–3e are the EDS spectra acquired from the marked regions 1 to 4 in Fig. 3a. The copper and carbon signals in EDS spectra are caused by the copper grids used in TEM observation. The EDS spectrum of region 1 confirms that the particle on the tip of the tooth is Au catalyst. Apparently, the growth of the teeth is induced by the Au catalyst. From the EDS spectra of region 2 to 4, it can be found that the atomic ratio of Zn:Ga in all these regions are close to 1:2. These results further confirm that the nanocomb is composed of ZnGa2O4. The high-resolution TEM (HRTEM) images and the corresponding selected-area electron diffraction (SAED) of region 2 to 4 in Fig. 3a are shown in Fig. 3f–3h and the inset to them, respectively, which reveal that the comb-like ZnGa2O4 nanostructures are highly crystallized. In Fig. 3f, it can be seen that the marked interplanar spacing is 0.48 nm which corresponds to the (111) lattice plane of ZnGa2O4, indicating the dominant growth direction of the tooth along the [111] direction. And no extended defects were found in the whole tooth. Fig. 3g is the HRTEM image and the corresponding SAED of junction region between the stem and the tooth depicts that the interface is very smooth without planar defects like other semiconductor comb-like nanostructures [31,32]. It is of advantage to be used in the future application. Figure 3h is the HRTEM image and the corresponding SAED of stem. The marked interplanar spacings are 0.48 and 0.29 nm corresponding to the (111) plane and plane, respectively. It can be inferred that the initial Ga2O3 nanowires were totally transformed into highly pure and single-crystalline ZnGa2O4 nanowires after reacting with Zn and/or ZnOx vapors at high temperature.

Bottom Line: In this paper, ZnGa(2)O(4) hierarchical nanostructures with comb-like morphology are fabricated by a simple two-step chemical vapor deposition (CVD) method: first, the Ga(2)O(3) nanowires were synthesized and employed as templates for the growth of ZnGa(2)O(4) nanocombs; then, the as-prepared Ga(2)O(3) nanowires were reacted with ZnO vapor to form ZnGa(2)O(4) nanocombs.The as-prepared ZnGa(2)O(4) nanocombs were highly crystallized with cubic spinel structure.From the photoluminescence (PL) spectrum, a broad band emission in the visible light region was observed of as-prepared ZnGa(2)O(4) nanocombs, which make it promising application as an optical material.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, 230031 Hefei, People's Republic of China.

ABSTRACT
In this paper, ZnGa(2)O(4) hierarchical nanostructures with comb-like morphology are fabricated by a simple two-step chemical vapor deposition (CVD) method: first, the Ga(2)O(3) nanowires were synthesized and employed as templates for the growth of ZnGa(2)O(4) nanocombs; then, the as-prepared Ga(2)O(3) nanowires were reacted with ZnO vapor to form ZnGa(2)O(4) nanocombs. Before the reaction, the Au nanoparticles were deposited on the surfaces of Ga(2)O(3) nanowires and used as catalysts to control the teeth growth of ZnGa(2)O(4) nanocombs. The as-prepared ZnGa(2)O(4) nanocombs were highly crystallized with cubic spinel structure. From the photoluminescence (PL) spectrum, a broad band emission in the visible light region was observed of as-prepared ZnGa(2)O(4) nanocombs, which make it promising application as an optical material.

No MeSH data available.